首页> 外文OA文献 >Formation of Nets of Corner-Shared Bicapped Gold Squares in SrAu3Ge: How a BaAl4-Type Derivative Reconciles Fewer Valence Electrons and the Origin of Its Uniaxial Negative Thermal Expansion
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Formation of Nets of Corner-Shared Bicapped Gold Squares in SrAu3Ge: How a BaAl4-Type Derivative Reconciles Fewer Valence Electrons and the Origin of Its Uniaxial Negative Thermal Expansion

机译:SrAu3Ge中的角共享带帽的金正方形网的形成:BaAl4型衍生物如何调和较少的价电子及其单轴负热膨胀的起源

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摘要

SrAu3Ge was synthesized by direct fusion of the mixed elements at high temperature followed by annealing treatments, and its structure was determined by single crystal X-ray diffraction means in space group (Pearson symbol: tP10) P4/nmm, a = 6.264(1) Å, c = 5.5082(9) Å, Z = 2 at room temperature. The structure of SrAu3Ge, a reapportioned √2 × √2 × 1 superstructure of CeMg2Si2(P4/mmm), exhibits checkerboard nets of corner-shared bicapped Au squares (or corner-shared Au(Au4/2)Ge octahedra), in which the apical Au–Ge pairs in adjoining nets are strongly interbonded in the c direction. This motif contrasts with that of the common BaAl4 (I4/mmm) prototype in which Al squares in comparable layers are alternately monocapped by Al from the top or the bottom. Typical examples show valence electron counts (vec) between 12 and 16 for the BaAl4 type and that for CeMg2Si2 is similar, 15. The special stability of SrAu3Ge, with vec = 9, derives from significant relativistic contribution of the Au 5d10 states to the Au–Ge and Au–Au bonding. These factors are also recognized in the marked redistribution of Au and Ge site occupancies from those in CeMg2Si2. SrAu3Ge exhibits a pronounced uniaxial negative thermal expansion along c, with a coefficient of −1.57 versus 2.16 × 10–5 K–1 in a and b. The reticulated Au5Ge octahedral layers expand in the ab plane on heating, whereas the strong, interlayer Au–Ge bonds remain fixed.
机译:SrAu3Ge是在高温下将混合元素直接熔融,然后进行退火处理而合成的,其结构是通过空间群中的单晶X射线衍射装置确定的(皮尔逊符号:tP10)P4 / nmm,a = 6.264(1) Å,c = 5.5082(9)Å,Z = 2在室温下。 SrAu3Ge的结构是CeMg2Si2(P4 / mmm)的重新配比的√2×√2×1上层结构,展示了角共享二分形Au正方形(或角共享Au(Au4 / 2)Ge八面体)的棋盘格网。相邻网络中的顶端Au-Ge对在c方向上牢固地相互键合。该图案与普通BaAl4(I4 / mmm)原型的图案相反,在普通原型中,可比较层中的Al正方形从顶部或底部被Al交替地单峰覆盖。典型示例显示,BaAl4型的价电子数(vec)在12至16之间,而CeMg2Si2的价电子数(vec)相似,为15。SrAu3Ge的特殊稳定性,vec = 9,得益于Au 5d10态对Au的显着相对论贡献。 –Ge和Au–Au键合。从CeMg2Si2中的Au和Ge位置占有率的显着重新分布中也认识到这些因素。 SrAu3Ge沿c表现出明显的单轴负热膨胀,a和b的系数为-1.57对2.16×10-5 K-1。网状的Au5Ge八面体层在加热时在ab平面中膨胀,而牢固的层间Au-Ge键保持固定。

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